The gold bonding wires is the most important material used in making
electrical connections between the chip and the external circuit.
It has good conductivity and corrosion resistance, and it could be
used for extra high speed bonding. So it widely used in microelectronics
industry.
Gold bonding wires
|
Loop sharp
Ball-pad |
Now our company has two series
of gold bonding wires(doped gold wires and advanced gold wires),nearly
20 categories gold wires, including all Dia. And dimension,
it is suitable for the different packaging fields.
| Doped gold bonding wires： |
| HD2 |
application |
HD3 |
application |
| The HD2 type ,doped with a few doping elements is
a standard wire for the most modern bonding technology
in normal and high speed ranges. due to its high loop
stability, elevated temperature strength and ductility
It can be used in most currently utilized components. |
◇ discrete components (SOT, TO,...)
◇ Integrated circuits
(P-DIP, PLCC, QFP,...)
◇ COB (Chip-on-board) |
This wire type contains other doping elements
apart from the well-established beryllium. Due to this
doping, type HD 3 has a higher strength, loop stiffness
and thermal stability than type HD 2. Loop stability
can also be guaranteed with thinner wire diameters and
in flatter and/or long loops.
|
◇ flat integrated
circuits(TSOP, TQFP, VSSOP, IC-cards,…)
◇ other flat product applications |
| HD5 HD6
|
Application |
|
|
These highly doped wires of different chemical compositions
are very suitable for low and long loop applications.
Both wire types are comparable in their characteristics
and offer outstanding material and processing properties
as well as good high temperature strength. They represent
an excellent bridge
between doped and alloyed wires.
|
◇ (BGA, MQFP, CQP, TSOP, TQFP,VSSOP, IC-cards,
...)
flat integrated circuits
(BGA, MQFP, TSOP, TQFP， VSSOP, IC-cards, ...)
◇ COB, foil frames |
|
|
| Advanced gold bonding wires： |
| HA1, HA3, HA5, HA6, HA7 Application |
| In contrast to the doped
Au wires, the advanced wire types contain a low percentage
of alloying elements or special doping composition.
This results in markedly higher wire strength, shorter
heat affected zones and better thermal stability without
a significant increase in electrical resistance. The
increased wire strength, while maintaining all other
mechanical properties, permits a reduction of wire diameter
together with a marked saving in precious metal costs.
Advanced bonding wires are especially suitable for the
following new techniques: |
◇ high speed bonding, high frequency bonding,
low temperature bonding
◇ fine pitch/fine size bonding
◇ low and long loop bonding
◇ bumps for flip chip
|
| -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- |
Technical data：
| |
| HD1 |
HD3 |
HA1 |
HA3 |
|
HD5 |
|
HA6 |
HD2 |
HD6 |
HA5 |
HA7 |
|
| diameter |
elongation |
breaking load |
| [um] |
[mil] |
[%] |
[cN] |
[cN] |
[cN] |
[cN] |
| 17.5±1 |
0.7 |
0.5-2.5 |
＞4.0 |
＞6.0 |
＞8.0 |
＞8.0 |
| 17.5±1 |
0.7 |
2.0-5.0 |
＞2.5 |
＞4.0 |
＞5.0 |
＞5.0 |
| 17.5±1 |
0.7 |
4.0-8.0 |
＞1.5 |
＞2.0 |
＞3.0 |
＞3.0 |
| 20±1 |
0.8 |
0.5-2.5 |
＞5.0 |
＞7.0 |
＞11.0 |
＞10.0 |
| 20±1 |
0.8 |
2.0-5.0 |
＞3.0 |
＞5.0 |
＞6.0 |
＞6.0 |
| 20±1 |
0.8 |
4.0-8.0 |
＞2.0 |
＞2.5 |
＞4.0 |
＞3.5 |
| 23±1 |
0.9 |
0.5-2.5 |
＞9.0 |
＞11.0 |
＞15.0 |
＞14.0 |
| 23±1 |
0.9 |
2.0-8.0 |
＞5.0 |
＞7.0 |
＞9.0 |
＞8.0 |
| 23±1 |
0.9 |
8.0-12.0 |
＞4.0 |
＞5.0 |
＞6.0 |
＞6.0 |
| 25±1 |
1.0 |
0.5-2.5 |
＞11.0 |
＞14.0 |
＞19.0 |
＞17.0 |
| 25±1 |
1.0 |
2.0-8.0 |
＞7.0 |
＞9.0 |
＞11.0 |
＞10.0 |
| 25±1 |
1.0 |
8.0-12.0 |
＞5.0 |
＞7.0 |
＞8.0 |
＞8.0 |
| 30±1 |
1.2 |
0.5-3.0 |
＞16.0 |
＞20.0 |
＞26.0 |
＞24.0 |
| 30±1 |
1.2 |
2.0-8.0 |
＞10.0 |
＞13.0 |
＞17.0 |
＞15.0 |
| 30±1 |
1.2 |
8.0-12.0 |
＞8.0 |
＞10.0 |
＞12.0 |
＞12.0 |
| 32±1 |
1.25 |
0.5-3.0 |
＞19.0 |
＞23.0 |
＞28.0 |
＞26.0 |
| 32±1 |
1.25 |
2.0-8.0 |
＞11.0 |
＞14.0 |
＞18.0 |
＞16.0 |
| 32±1 |
1.25 |
8.0-12.0 |
＞9.0 |
＞12.0 |
＞13.0 |
＞13.0 |
| 38±1 |
1.5 |
0.5-3.5 |
＞25.0 |
＞30.0 |
＞41.0 |
＞37.0 |
| 38±1 |
1.5 |
3.0-8.0 |
＞16.0 |
＞19.0 |
＞26.0 |
＞22.0 |
| 38±1 |
1.5 |
8.0-15.0 |
＞14.0 |
＞16.0 |
＞17.0 |
＞17.0 |
| 50±1 |
2.0 |
0.5-3.5 |
＞48.0 |
＞52.0 |
＞64.0 |
＞56.0 |
| 50±1 |
2.0 |
3.0-10.0 |
＞30.0 |
＞34.0 |
＞44.0 |
＞36.0 |
| 50±1 |
2.0 |
10.0-18.0 |
＞25.0 |
＞28.0 |
＞29.0 |
＞29.0 |
| -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- |
The heat affected zone of gold bonding wires：
The heat affected zone is an important feature when assessing
wire strength and workability in loop formation.
ESEC 8088
tail length: 400 μm
electrode distance: 350 μm
EFO current: 21.27 mA
EFO time: 1.3 ms
0.8 mil FAB ~ 1.65 x d wire
1.0 mil FAB ~ 1.49 x d wire
1.2 mil FAB ~ 1.75 x d wire
|
The
length
of
heat affected zone
[μm] |
Diameter [mil] · min./max./average–
|
| -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- |
High temperature strength：
HD2 HD3 HD5 HA1 HA3 HA5 HA6 HA7
HD6
Breaking load [cN
|
Breaking load： Elongation:
Condition of breaking load elongation test
250°C / 20 秒.
Before heat treatment at 4% elongation |
| -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- |
The fusing current of gold bonding wires:
diameter
|
|
loop length[mm]
|
| -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- |
Resistivity of gold bonding wires： |
| |
Wire type(elongation at 4%) |
|
|
|
|
